描述
bfp840fesd
射频双极电源晶体管 RF BIP TRANSISTORS
否
M/A-COM Technology Solutions
Single 直流集电极/Base Gain hfe
40
30 MHz 集电极—发射极最大电压
25 V 发射极 - 基极电压
4 V
20 A
250 W
Case 211-11
Tray
BFP840FESD
Infineon Technologies AG
INFINEON
28
1480 kb
Robust Low Noise Silicon Germanium Bipolar RF Transistor